Get More Reliable Power Transistor Measurements with Pulsed I–V Testing

The problem with DC sweeps

When testing powertransistors, even a short DC sweep can cause the device to heat up quickly.That heat shifts the electrical behavior—especially on key parameters likeon-resistance (RDS(on)).

As a result, you’re notmeasuring the real performance of the component anymore. You’re measuring theheated version of it.

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A simple fix: pulsed I–V testing

Instead of applying acontinuous signal, the AM3242 SMU delivers very short voltage as low as1 µs.

This allows you to:

• Measure the I–V curve before the     junction heats up
• Get more accurate values of RDS(on), even     at high current
• Characterize the body diode under static     reverse bias

All without specialcooling or complex setup.

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The AM3242 in your lab

The AM3242 is designedfor pulsed I–V testing on power devices such as Si, SiC or GaN MOSFETs. Itconnects directly to the AM3200 platform and runs through IVCADsoftware.

Key specs include:

• Voltage range: up to +1500 V
• Current     range: up to ±150 A
• Pulse width: as low as 1 µs
• High-resolution     measurements, repeatable results

Depending on your setupand test goals, the SMU can operate across a wide range of conditions, withoutrequiring external cooling.

What’s in the application note

We’ve prepared a shortguide that covers:

• The full test setup (including fixture,     probes, and connections)
• Example I–V curves captured using pulsed     mode
• On-resistance     evolution vs current
• Reverse conduction measurement at different     gate voltages
• Practical tips for setup and     reproducibility

It’s designed forengineers who want fast, clean, reliable data—without unnecessary complexity.